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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 43493.3-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法 |
China National Standards epit |
 English PDF |
| GB/T 43493.2-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分：缺陷的光学检测方法 |
China National Standards epit |
English PDF |
| GB/T 43493.1-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 1: Defect classification {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类 |
China National Standards epit |
English PDF |
| GB/T 42905-2023 |
Testing of Silicon Carbide epitaxial Layer Thickness Infrared Reflection Method {译} 碳化硅外延层厚度的测试 红外反射法 |
China National Standards epit |
English PDF |
| GB/T 42902-2023 |
Testing of surface defects of silicon carbide epitaxial wafers Laser scattering method {译} 碳化硅外延片表面缺陷的测试 激光散射法 |
China National Standards epit |
English PDF |
| GB/T 30652-2023 |
Trichlorosilane for silicon epitaxy {译} 硅外延用三氯氢硅 |
China National Standards epit |
English PDF |
| GB/T 14146-2021 |
Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method 硅外延层载流子浓度的测试 电容-电压法 |
China National Standards epit |
English PDF |
| GB/T 14139-2019 |
Silicon epitaxial wafers 硅外延片 |
China National Standards epit |
English PDF |
| GB/T 37053-2018 |
General specification for epitaxial wafers and substrates based on gallium nitride 氮化镓外延片及衬底片通用规范 |
China National Standards epit |
English PDF |
| GB/T 36646-2018 |
Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy 制备氮化物半导体材料用氢化物气相外延设备 |
China National Standards epit |
English PDF |
| GB/T 34494-2017 |
Hydrogen decrepitating neodymium iron boron permanent magnetic powder 氢碎钕铁硼永磁粉 |
China National Standards epit |
English PDF |
| GB/T 14142-2017 |
Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique 硅外延层晶体完整性检验方法 腐蚀法 |
China National Standards epit |
English PDF |
| GB/T 35310-2017 |
200mm silicon epitaxial wafer 200mm硅外延片 |
China National Standards epit |
English PDF |
| GB/T 35308-2017 |
epitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cell 太阳能电池用锗基Ⅲ-Ⅴ族化合物外延片 |
China National Standards epit |
English PDF |
| GB/T 30655-2014 |
Test methods for internal quantum efficiency of nitride LED epitaxial layers 氮化物LED外延片内量子效率测试方法 |
China National Standards epit |
English PDF |
| GB/T 30654-2014 |
Test method for lattice constant of III-nitride epitaxial layers Ⅲ族氮化物外延片晶格常数测试方法 |
China National Standards epit |
English PDF |
| GB/T 30653-2014 |
Test method for crystal quality of III-nitride epitaxial layers Ⅲ族氮化物外延片结晶质量测试方法 |
China National Standards epit |
English PDF |
| GB/T 30652-2014 |
Trichlorosilane for silicon epitaxial 硅外延用三氯氢硅 |
China National Standards epit |
English PDF |
| GB/T 30856-2014 |
GaAs substrates for LED epitaxial chips LED外延芯片用砷化镓衬底 |
China National Standards epit |
English PDF |
| GB/T 30855-2014 |
GaP substrates for LED epitaxial chips LED外延芯片用磷化镓衬底 |
China National Standards epit |
English PDF |
| GB/T 30854-2014 |
Gallium nitride based epitaxial layer for LED lighting LED发光用氮化镓基外延片 |
China National Standards epit |
English PDF |
| GB/T 14863-2013 |
Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes 用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法 |
China National Standards epit |
English PDF |
| GB/T 29056-2012 |
Trichlorosilane for silicon epitaxy - Determination of boron，aluminium，phosphorus，vanadium，chrome，manganese，iron，cobalt，nickel，copper，molybdenum，arsenic and antimony content - Inductively coupled plasma mass spectrometric method 硅外延用三氯氢硅化学分析方法 硼、铝、磷、钒、铬、锰、铁、钴、镍、铜、钼、砷和锑量的测定 电感耦合等离子体质谱法 |
China National Standards epit |
English PDF |
| GB/T 14847-2010 |
Test mothod for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance 重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法 |
China National Standards epit |
English PDF |
| GB/T 14146-2009 |
Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method 硅外延层载流子浓度测定 汞探针电容-电压法 |
China National Standards epit |
English PDF |
| GB/T 14141-2009 |
Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array 硅外延层、扩散层和离子注入层薄层电阻的测定 直排四探针法 |
China National Standards epit |
English PDF |
| GB/T 14139-2009 |
Silicon epitaxial wafers 硅外延片 |
China National Standards epit |
English PDF |
| GB/T 8758-2006 |
Measuring thickness of epitaxial layers of gallium arsenide by infrared interference 砷化镓外延层厚度红外干涉测量方法 |
China National Standards epit |
English PDF |
| GB/T 11068-2006 |
Gallium arsenide epitaxial layer - determination of carrier concentration voltage-capacitance method 砷化镓外延层载流子浓度电容-电压测量方法 |
China National Standards epit |
English PDF |
| GB/T 10322.6-2004 |
Iron ore--Determination of decrepitation index 铁矿石 热裂指数的测定方法 |
China National Standards epit |
English PDF |
| GB/T 14142-1993 |
Test method for crystallographic perfection of epit-axial layers in silicon by etching techniques 硅外延层晶体完整性检查方法 腐蚀法 |
China National Standards epit |
English PDF |
| GB/T 14015-1992 |
Silicon on sapphire epitaxial wafers 硅-蓝宝石外延片 |
China National Standards epit |
English PDF |
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