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China arsenide GB Standards Search System


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  •  China "arsenide" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • GB/T 35305-2017
  • Monocrystalline gallium arsenide polished wafers for solar cell arsenide
    China National Standards
  • GB/T 19199-2015
  • Test method for carbon acceptor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy arsenide
    China National Standards
  • GB/T 17170-2015
  • Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy arsenide
    China National Standards
  • SJ/T 11492-2015
  • Test methods for measurement of composition of gallium arsenide phosphide wafers by photoluminescence arsenide
    China Electronics Standards
  • SJ/T 11490-2015
  • Test method for measuring etch pit density (EPD) in low dislocation density gallium arsenide wafers arsenide
    China Electronics Standards
  • SJ/T 11496-2015
  • Determination of boron concentration in gallium arsenide by infrared absorption arsenide
    China Electronics Standards
  • SJ/T 11497-2015
  • Test method for thermal stability testing of gallium arsenide wafers arsenide
    China Electronics Standards
  • GB/T 25075-2010
  • Gallium arsenide single crystal for solar cell arsenide
    China National Standards
  • GB/T 11093-2007
  • Liquid encapsulated czochralski - grown gallium arsenide single crystals and as-cut slices   arsenide
    China National Standards
  • GB/T 11094-2007
  • Horizontal bridgman grown gallium arsenide single crystal and cutting wafer arsenide
    China National Standards
  • GB/T 6730.45-2006
  • Iron ores - Determination of arsenic content - Arseno-molybdenum blue spectrophotometric method after hydrogen arsenide separation arsenide
    China National Standards
  • GB/T 8757-2006
  • Determination of carrier concentration in gallium arsenide by the plasma resonance minimum arsenide
    China National Standards
  • GB/T 11068-2006
  • Gallium arsenide epitaxial layer - determination of carrier concentration voltage-capacitance method arsenide
    China National Standards
  • GB/T 8758-2006
  • Measuring thickness of epitaxial layers of gallium arsenide by infrared interference arsenide
    China National Standards
  • GB/T 8760-2006
  • Gallium arsenide single crystal-determination of dislocation density arsenide
    China National Standards
  • GB/T 20228-2006
  • Gallium arsenide single crystal arsenide
    China National Standards
  • GB/T 19199-2003
  • Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption method arsenide
    China National Standards
  • SJ 20843-2002
  • Quantitative determination of AB microscopic defect density in gallium arsenide single crystal arsenide
    China Electronics Standards
  • SJ 20844-2002
  • Test method for microzone homogeneity of semi-insulating monocrystal gallium arsenide arsenide
    China Electronics Standards
  • SJ 20842-2002
  • Test method for Ga/As ratio of surface of gallium arsenide arsenide
    China Electronics Standards
  • GB/T 18032-2000
  • The inspecting method of AB microscopic defect in gallium arsenide single crystal arsenide
    China National Standards
  • SJ 20714-1998
  • Test method for sub-surface damage of gallium arsenide polished wafer by X-ray double crystal diffraction arsenide
    China Electronics Standards
  • SJ 20713-1998
  • Method for the determination of 12 species of impurities including copper, manganese, magnesium, vanadium, titanium in high-purity gallium used for gallium arsenide by ICP spectrometry arsenide
    China Electronics Standards
  • GB/T 17170-1997
  • Test method for deep level EL2 concentration of undoped semiinsulating monocrystal gallium arsenide by measurement infra-red absorption method arsenide
    China National Standards
  • SJ 20635-1997
  • Test method for residual impurities concentration in microzone of semi-insulating gallium arsenide arsenide
    China Electronics Standards
  • SJ 3244.5-1989
  • Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias arsenide
    China Electronics Standards
  • SJ 3244.2-1989
  • Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction arsenide
    China Electronics Standards
  • SJ 3244.3-1989
  • Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide arsenide
    China Electronics Standards
  • SJ 3249.1-1989
  • Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material arsenide
    China Electronics Standards
  • SJ 3244.4-1989
  • Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method arsenide
    China Electronics Standards
  • SJ 3241-1989
  • Gallium arsenide single-crystal bar and wafer arsenide
    China Electronics Standards
  • SJ 3248-1989
  • Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection arsenide
    China Electronics Standards
  • SJ 3244.1-1989
  • Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide arsenide
    China Electronics Standards
  • SJ 3247-1989
  • Methods of measurement for extended-layer thickness of same-type Gallium arsenide by infra-red interference arsenide
    China Electronics Standards
  • SJ 3242-1989
  • Gallium arsenide epitaxy wafers arsenide
    China Electronics Standards
  • SJ 3249.2-1989
  • Methods of measurement for Carbon concentration of semi-insulation Gallicem arsenide single crystal by infra-red absorption arsenide
    China Electronics Standards
  • SJ 3249.4-1989
  • (Semi-insulating gallium arsenide infrared absorption in EL2 concentration test methods) arsenide
    China Electronics Standards
  • SJ 3249.3-1989
  • Methods of measurement for chromium concentration in semi-insulation Gallium arsenide by infra-red absorption arsenide
    China Electronics Standards
  • GB/T 8912-1988
  • Hygienic determination method of arsenide in air of residential areas--Silver diethyldithiocarbamate spectrophotometric method arsenide
    China National Standards

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