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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 46789-2025 |
Semiconductor Devices - Movable Ion Test for Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) {译} 半导体器件 - 金属氧化物半导体场效应晶体管（MOSFETs）的可动离子试验 |
China National Standards Semiconductor Devices Metal |
 English PDF |
| GB/T 46717-2025 |
Semiconductor Devices - Metallization Cavity Stress Test {译} 半导体器件 - 金属化空洞应力试验 |
China National Standards Semiconductor Devices Metal |
English PDF |
| GB/T 45716-2025 |
Semiconductor Devices - Bias Temperature Instability Test for Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) {译} 半导体器件-金属氧化物半导体场效应晶体管（MOSFETs）的偏置温度不稳定性试验 |
China National Standards Semiconductor Devices Metal |
English PDF |
| GB/T 45719-2025 |
Semiconductor Devices - Metal Oxide Semiconductor (MOS) - Hot Carrier Test for Transistors {译} 半导体器件-金属氧化物半导体（MOS）-晶体管的热载流子试验 |
China National Standards Semiconductor Devices Metal |
English PDF |
| GB/T 45718-2025 |
Semiconductor Devices - Time-Dependent Dielectric Breakdown (TDDB) Test for Internal Metal Layers {译} 半导体器件-内部金属层间的时间相关介电击穿（TDDB）试验 |
China National Standards Semiconductor Devices Metal |
English PDF |
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